S.A. Kukushkin et al. fifty,51 explained their coordinated substitution of atoms strategy for the growth of epitaxial SiC and as opposed it to far more standard vapor section deposition solutions. The authors formulated their approach based on the conversion of the highest layers with the Si substrate surface into epitaxial https://www.facebook.com/permalink.php?story_fbid=pfbid029zKqEVYfb1SDyhK5uN1vHY2PMjdtwswmbXzJs4kvyZo8UKLf7xhxPEisosAacav7l&id=61562415773754&__cft__[0]=AZXZzicXrDrcoFUXR62i7tAH-rEAxnPN4IYr2-kS_y2aB2kDRZRZoFP8m0tZwwgbtzQjrDKHIUcx-xbgd4E1T7GjDzQs3kaBxGSANEeCPsZA5rMmzsrET7dGnxgnC0_Nlp-Zy_WrFgEaeBdXSd79mq0ZJ7sOu14-eUaCNPJ9EVk60eNNViglRmacuvWdCuhzgGjDbB9awN0KTWcP5Uu2QZjr&__tn__=%2CO%2CP-R